2 edition of Modulated semiconductor structures found in the catalog.
Modulated semiconductor structures
Yamada Conference on Modulated Semiconductor Structures (1985 Kyoto, Japan)
|Statement||edited by H. Sakaki.|
|Contributions||Sakaki, Hiroyuki, 1944-|
|LC Classifications||QC610.9 .Y36 1985|
|The Physical Object|
|Pagination||xviii, 710, 25 p. :|
|Number of Pages||710|
|LC Control Number||90105533|
Buy Physics of Semiconductors in High Magnetic Fields (Series on Semiconductor Science and Technology Book 15): Read Books Reviews - Proc. SPIE , Fabrication, Testing, and Reliability of Semiconductor Lasers, pg (10 April ); doi: / Read Abstract + Broad-area stripe laser diodes based on GaAs and Al-free spacer and Al-free spacer and waveguide layers were studied and compared to conventional AlGaAs-laser diodes.
Including step-by-step practical design and simulation examples together with detailed numerical algorithms, this book provides researchers, device designers and graduate students in optoelectronics with the numerical techniques to obtain solutions for their own : Xun Li. A p–n junction is a boundary or interface between two types of semiconductor materials, p-type and n-type, inside a single crystal of semiconductor. The "p" (positive) side contains an excess of holes, while the "n" (negative) side contains an excess of electrons in the outer shells of the electrically neutral atoms there. This allows electrical current to pass through the junction only .
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The book is organized into three parts. Part I provides a perspective of developments and structural characterization of the semiconductor and metal area. The electronic properties in different configurations and structures, including compositional and doping modulation are covered in Part II.
MSS proceedings of the Fourth International Conference on Modulated Semiconductor Structures, Ann Arbor, MI, USA, July by International Conference on Modulated Semiconductor Structures (Book) 4 editions published in in English.
The book is organized Modulated semiconductor structures book three parts. Part I provides a perspective of developments and structural characterization of the semiconductor and metal area.
The electronic properties in different configurations and structures, including compositional and doping modulation are covered in Part Edition: 1. The paper discusses the particular advantages which liquid phase epitaxy (LPE) offers for the production of low-dimensional structures.
It deals with the progress which growth techniques and growth apparature have by: 7. International Conference on Modulated Semiconductor Structures (3rd: Montpellier, France).
3rd International Conference on Modulated Semiconductor Structures. Les Ulis, France: Editions de physique,  (OCoLC) Material Type: Conference publication: Document Type: Book: All Authors / Contributors: A Raymond; P Voisin.
In this contribution I review some of the important results obtained on periodic and quasiperiodic composition al amorphous semiconductor multilayers made by rf glow discharge method in our laboratory. We show that most of the structures have sharp and smooth interfaces to better than 5 Ȧ.
Emphasis is placed on evidence for quantum size Modulated semiconductor structures book in periodic heterostructures and.
A new type of electron confinement in modulated semiconductor systems is proposed. The confinement occurs when the effective mass of electrons in the central region of the structure is higher than that in the outside regions.
This results in a ‘kinetic well’ produced by the transverse free : M. Kubisa, W. Zawadzki. Materials Science and Technology Series: Synthetic Modulated Structures focuses on synthetic modulated structures, which is described as any periodically perturbed materials with a repetition greater than the basic unit cell dimension.
The book is organized into three parts. X-ray scattering by porous silicon modulated structures Article in Crystallography Reports 57(2) March with 8 Reads How we measure 'reads'. These structures share the common physical principles of a MOSFET controlling current flow in a wide-base bipolar transistor.
Chapter 3, IGBT Structural Design, describes the symmetric and asymmetric IGBT structures and performance. For the symmetric blocking-device structure, a minimum drift region thickness occurs at an optimum doping.
INTRODUCTION Developments in semiconductor heterojunction structures up to fifteen years ago are described in the book, "Heterojunctions and Metal-Semiconductor Junctions," by Milnes and Feucht, and in "Semiconductor Heterojunctions," by Sharma and Purohit.
Various aspects have also been reviewed in other volumes [3, 4].Cited by: An optical modulator is an optical device which is used to modulate a beam of light with a perturbation device. It is a kind of transmitter to convert information to optical binary signal through optical fiber (optical waveguide) or transmission medium of optical frequency in fiber optic are several methods to manipulate this device depending on the.
The general field of preparation and study of metastable and modulated semiconductor structures has progressed rapidly in recent years. This short overview offers an assessment of the progress and current understanding in the areas of fabrication, characterization, and utilization of these new material system.
The discussion includes the more prominent growth techniques, theoretical Author: F. Grunthaner, A. Madhukar. semiconductor NWs, including vapor phase, templated, and solution-based meth-ods. Chapter 3 will further expand upon the basic synthetic methods to yield controlled growth of a host of semiconductor NWs with modulated morphologies and structures, including axial and radial heterostructures, kinked, branched, and/or vFile Size: KB.
The interplay of tunneling transport and carrier-mediated ferromagnetism in narrow semiconductor multiquantum well structures containing layers of GaMnAs is. This book summarizes most of the fundamental physical phenomena which semiconductors and their modulated structures exhibit in high magnetic fields.
Readers can learn not only the basic theoretical background but also the present state of the art from the most advanced data in this rapidly growing research area.
• JaspritSingh, Semiconductor Devices:Basic Principles Book by the same author on Devices but including semiconductor physics & processing. • U. Mishra& J. Singh, Semiconductor Device Physics and Design E-book available on line thru UT Lib. • Karl Hess, Advanced Theory of Semiconductor Devices Thin, but covers lots of stuff at advanced.
We have studied in chapter 1 that band semiconductors belong to a special class of insulators with a relatively small energy band gap of the order of a few electron volts. The energy band gap value E g of typical semiconductor materials such as Si and GaAs at low temperatures are eV and eV, respectively.
Thus, at a finite temperature the thermal energy can excite a. Laser diodes represent a key element in the emerging field of opto electronics which includes, for example, optical communication, optical sensors or optical disc systems.
For all these applications, information is either transmitted, stored or read out. The performance of these systems depends to a great deal on the performance of the laser diode with regard to its. vlll PHASE-MODULATED OPTICAL COMMUNICATION SYSTEMS Operation of Amplitude Modulator Generation of RZ-DPSK Signals 4 Direct Frequency Modulation of a Semiconductor Laser 5 Summary COHERENT OPTICAL RECEIVERS AND IDEAL PERFORMANCE 1 Basic Coherent Receiver Structures Single-Branch Receiver.
Low dimensional heterostructures have potential applications in information, sensing, and energy-related technologies. In order to obtain high-quality low dimensional heterostructures, an essential method is tuning chemical composition in a single nanostructure to obtain two or multiple components with well-Cited by: Calculations of the electronic states and transition energies of a novel kind of barrier modulated semiconductor quantum wire have been made by solving the two‐dimensional Schrödinger equation numerically.
Laterally confined electronic states are found with energy spacings up to 10 meV for wire widths down to Å. The results for the transition energies are shown to be in Cited by: 1.Physics of Semiconductors in High Magnetic Fields (Series on Semiconductor Science and Technology) [Miura, Noboru] on *FREE* shipping on qualifying offers.
Physics of Semiconductors in High Magnetic Fields (Series on Semiconductor Science and Technology)Format: Hardcover.